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| Low frequency transistor (-20V,-5A) 2SB1412 Features 1) Low VCE(sat). VCE(sat) = -0.35V (Typ.) (IC/IB = -4A / -0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SD2118. Structure Epitaxial planar type PNP silicon transistor (1) Base (2) Collector (3) Emitter Dimensions (Unit : mm) 2SB1412 ROHM : CPT3 EIAJ : SC-63 Denotes hFE Absolute maximum ratings (Ta=25C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power 2SB1412 dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Limits -30 -20 -6 -5 -10 1 10 150 -55 to 150 Unit V V V A(DC) A(Pulse) 1 W W(Tc=25C) C C 1 Single pulse, Pw=10ms Electrical characteristics (Ta=25C) Parameter Collector-base breakdown voltage Symbol BVCBO Min. -30 -20 -6 - - - 82 - - Typ. - - - - - 0.35 - 120 60 Max. - - - -0.5 -0.5 -1.0 390 - - Unit V V V IC= -50A IC= -1mA IE= -50A VCB= -20V VEB= -5V IC/IB= -4A/ -0.1A VCE= -2V, IC= -0.5A VCE= -6V, IE=50mA, f=100MHz VCB= -20V, IE=0A, f=1MHz Conditions Collector-emitter breakdown voltage BVCEO Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance BVEBO ICBO IEBO VCE(sat) hFE fT Cob A A V - MHz pF Measured using pulse current. www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. 1/3 2009.12 - Rev.C 2SB1412 Packaging specifications and hFE Package Code Type 2SB1412 hFE PQR Basic ordering unit (pieces) Taping TL 2500 Data Sheet hFE values are classified as follows : Item hFE P 82 to 180 Q 120 to 270 R 180 to 390 Electrical characteristic curves -10 -5 VCE= -2V COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Ta=100C 25C -25C DC CURRENT GAIN : hFE -2 -1 -500m -200m -100m -50m -20m -10m -5m -2m -1m -5 -50mA -45mA -40mA -4 -35mA Ta=25C mA -30 A -25m -20mA 5k 2k 1k 500 200 100 50 20 10 Ta=25C -15mA -3 -10mA -2 -5mA -1 IB=0A VCE= -5V -2V -1V 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 0 0 -0.4 -0.8 -1.2 -1.6 -2.0 5 -1m -2m -5m -0.01 -0.02 -0.05 -0.1 -0.2 -0.5 -1 -2 COLLECTOR CURRENT : IC (A) -5 -10 BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.1 Grounded emitter propagation characteristics Fig.2 Grounded emitter output characteristics Fig.3 DC current gain vs. collector current ( ) VCE= -1V DC CURRENT GAIN : hFE VCE= -2V COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) 5k 2k DC CURRENT GAIN : hFE 5k 2k 1k 500 200 100 50 20 10 -5 -2 -1 -0.5 -0.2 -0.1 -0.05 -0.02 Ta=25C 1k 500 200 100 50 20 10 -1m -2m -5m -0.01 -0.02 -0.05 -0.1 -0.2 -0.5 -1 -2 Ta=100C 25C -25C Ta=100C 25C -25C IC/IB=50/1 40/1 /1 30/1 10/1 5 -5 -10 -1m -2m -5m -0.01 -0.02 -0.05 -0.1 -0.2 -0.5 -1 -2 5 -5 -10 -0.01 -2m -5m -0.0- -0.02 -0.05 -0.1 -0.2 -0.5 -1 -2 -5 -10 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig.4 DC current gain vs. collector current ( ) Fig.5 DC current gain vs. collector current ( ) Fig.6 Collector-emitter saturation voltage vs. collector current ( ) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) lC/lB=10 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) lC/lB=30 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) -5 -2 -1 -0.5 -0.2 -0.1 -0.05 -0.02 Ta=100C -5 -2 -1 -0.5 -0.2 -0.1 -0.05 -0.02 -5 -2 -1 -0.5 -0.2 -0.1 -0.05 -0.02 Ta=100C lC/lB=40 -25C 25C Ta=100C 25C -25C 25C -25C -0.01 -2m -5m -0.01-0.02 -0.05 -0.1 -0.2 -0.5 -1 -2 COLLECTOR CURRENT : IC (A) -5 -10 -0.01 -2m -5m -0.01-0.02 -0.05 -0.1 -0.2 -0.5 -1 -2 COLLECTOR CURRENT : IC (A) -5 -10 -0.01 -2m -5m -0.01-0.02 -0.05 -0.1 -0.2 -0.5 -1 -2 COLLECTOR CURRENT : IC (A) -5 -10 Fig.7 Collector-emitter saturation voltage vs. collector current ( ) Fig.8 Collector-emitter saturation voltage vs. collector current ( ) Fig.9 Collector-emitter saturation voltage vs. collector current ( ) www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. 2/3 2009.12 - Rev.C 2SB1412 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) Data Sheet TRANSEITION FREQUENCY : fT (MHz) lC/lB=50 -25C 25C Ta=100C -2 -1 -0.5 -0.2 -0.1 -0.05 -0.02 500 200 100 50 20 10 5 2 1 1 2 5 10 20 Ta=25C VCE= -6V COLLECTOR OUTPUT CAPACITANCE : Cob (pF) -5 1 000 1000 500 Ta=25C f=1MHz IE=0A 200 100 50 20 10 -0.1 -0.2 -0.5 -1 -0.01 -2m -5m -0.01-0.02 -0.05 -0.1 -0.2 -0.5 -1 -2 -5 -10 50 100 200 500 1000 -2 -5 -10 -20 -50 COLLECTOR CURRENT : IC (A) EMITTER CURRENT : IE (mA) COLLECTOR TO BASE VOLTAGE : VCB (V) Fig.10 Collector-emitter saturation voltage vs. collector current ( ) Fig.11 Gain bandwidth product vs. emitter current Fig.12 Collector output capacitance vs. collector-base voltage EMITTER INTPUT CAPACITANCE : Cib (pF) 1000 500 100 COLLECTOR CURRENT : IC (A) Ta=25C f=1MHz IC=0A 50 20 10 Pw Ta=25C Single nonrepetitive pulse = Pw =1 200 100 50 5 2 1 500m 200m 100m 50m 20m 10m 0m 10 0m s DC s 20 10 -0.1 -0.2 -0.5 -1 -2 -5 -10 0.2 0.5 1 2 5 10 20 50 100 200 500 EMITTER TO BASE VOLTAGE : VEB (V) COLLECTOR TO EMITTER VOLTAGE : -VCE (V) Fig.13 Emitter input capacitance vs. emitter-base voltage Fig.14 Safe operation area F(2SB1412) www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. 3/3 2009.12 - Rev.C Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM and other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the use of such technical information. The Products specified in this document are intended to be used with general-use electronic equipment or devices (such as audio visual equipment, office-automation equipment, communication devices, electronic appliances and amusement devices). The Products specified in this document are not designed to be radiation tolerant. While ROHM always makes efforts to enhance the quality and reliability of its Products, a Product may fail or malfunction for a variety of reasons. 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